PSMN4R8-100YSEX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: PSMN4R8-100YSE/SOT1023/4 LEADS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 50 V
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 4.23 EUR |
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Technische Details PSMN4R8-100YSEX Nexperia USA Inc.
Description: PSMN4R8-100YSE/SOT1023/4 LEADS, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V, Power Dissipation (Max): 294W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 50 V.
Weitere Produktangebote PSMN4R8-100YSEX nach Preis ab 4.84 EUR bis 8.24 EUR
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PSMN4R8-100YSEX | Hersteller : Nexperia USA Inc. |
Description: PSMN4R8-100YSE/SOT1023/4 LEADS Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 50 V |
auf Bestellung 2277 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN4R8-100YSEX | Hersteller : Nexperia |
MOSFET PSMN4R8-100YSE/SOT1023/4 LEADS |
auf Bestellung 4983 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN4R8-100YSEX | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN4R8-100YSEX - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.0036 ohm, LFPAK56E, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 294W Anzahl der Pins: 4Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0036ohm |
auf Bestellung 7338 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN4R8-100YSEX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 120A T/R |
Produkt ist nicht verfügbar |
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| PSMN4R8-100YSEX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 115A; Idm: 653A; 294W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 115A Pulsed drain current: 653A Power dissipation: 294W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN4R8-100YSEX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 115A; Idm: 653A; 294W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 115A Pulsed drain current: 653A Power dissipation: 294W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |