PSMN5R3-25MLDX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 25V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 15A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 858 pF @ 12 V
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 0.78 EUR |
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Technische Details PSMN5R3-25MLDX Nexperia USA Inc.
Description: MOSFET N-CH 25V 70A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 15A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 51W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 858 pF @ 12 V.
Weitere Produktangebote PSMN5R3-25MLDX nach Preis ab 0.56 EUR bis 1.82 EUR
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PSMN5R3-25MLDX | Hersteller : Nexperia |
MOSFET PSMN5R3-25MLD/SOT1210/mLFPAK |
auf Bestellung 175 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN5R3-25MLDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 70A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 15A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 51W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 858 pF @ 12 V |
auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN5R3-25MLDX | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN5R3-25MLDX - Leistungs-MOSFET, NextPowerS3, n-Kanal, 25 V, 70 A, 0.00525 ohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 25V rohsCompliant: Y-EX Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.8V euEccn: NLR Verlustleistung: 51W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00525ohm |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN5R3-25MLDX | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN5R3-25MLDX - Leistungs-MOSFET, NextPowerS3, n-Kanal, 25 V, 70 A, 0.00525 ohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 25V rohsCompliant: Y-EX Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.8V euEccn: NLR Verlustleistung: 51W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00525ohm |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN5R3-25MLDX | Hersteller : NEXPERIA |
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| PSMN5R3-25MLDX | Hersteller : NEXPERIA |
PSMN5R3-25MLDX SMD N channel transistors |
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