auf Bestellung 2719 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.31 EUR |
10+ | 2.75 EUR |
100+ | 2.2 EUR |
250+ | 2.02 EUR |
500+ | 1.83 EUR |
1000+ | 1.57 EUR |
1500+ | 1.49 EUR |
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Produktbewertung abgeben
Technische Details PSMN5R5-100YSFX Nexperia
Description: PSMN5R5-100YSF/SOT669/LFPAK, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 115A (Ta), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V, Power Dissipation (Max): 238W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6238 pF @ 50 V.
Weitere Produktangebote PSMN5R5-100YSFX nach Preis ab 2.95 EUR bis 4.96 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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PSMN5R5-100YSFX | Hersteller : Nexperia USA Inc. |
Description: PSMN5R5-100YSF/SOT669/LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Power Dissipation (Max): 238W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6238 pF @ 50 V |
auf Bestellung 1487 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN5R5-100YSFX | Hersteller : NEXPERIA | Next Power 100 V, 5.5 mOhm N-Channel MOSFET |
Produkt ist nicht verfügbar |
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PSMN5R5-100YSFX | Hersteller : Nexperia USA Inc. |
Description: PSMN5R5-100YSF/SOT669/LFPAK Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Power Dissipation (Max): 238W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6238 pF @ 50 V |
Produkt ist nicht verfügbar |