auf Bestellung 1220 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.45 EUR |
| 10+ | 0.91 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.45 EUR |
| 1500+ | 0.29 EUR |
| 3000+ | 0.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN6R0-25YLDX Nexperia
Description: MOSFET N-CH 25V 61A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Tc), Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 43W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V.
Weitere Produktangebote PSMN6R0-25YLDX nach Preis ab 0.53 EUR bis 0.69 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN6R0-25YLDX | Hersteller : NXP Semiconductors |
 Trans MOSFET N-CH 25V 61A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 33585 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
 |
PSMN6R0-25YLDX | Hersteller : Nexperia |
Trans MOSFET N-CH 25V 61A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
|||||||||
 |
PSMN6R0-25YLDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 61A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
PSMN6R0-25YLDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 61A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 12 V |
Produkt ist nicht verfügbar |