PSMN6R1-25MLDX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 25V 60A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.24mOhm @ 15A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 702 pF @ 12 V
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 0.59 EUR |
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Technische Details PSMN6R1-25MLDX Nexperia USA Inc.
Description: MOSFET N-CH 25V 60A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 7.24mOhm @ 15A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 702 pF @ 12 V.
Weitere Produktangebote PSMN6R1-25MLDX nach Preis ab 0.5 EUR bis 1.4 EUR
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PSMN6R1-25MLDX | Hersteller : Nexperia |
MOSFET PSMN6R1-25MLD/SOT1210/mLFPAK |
auf Bestellung 575 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN6R1-25MLDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 60A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7.24mOhm @ 15A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 702 pF @ 12 V |
auf Bestellung 1549 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN6R1-25MLDX | Hersteller : NEXPERIA |
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