PSMN6R3-120PS NXP Semiconductors
Hersteller: NXP SemiconductorsDescription: PSMN6R3-120PS - N-CHANNEL 120V S
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 25A, 10V
Power Dissipation (Max): 405W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 207.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11384 pF @ 60 V
auf Bestellung 319 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 141+ | 5.07 EUR |
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Technische Details PSMN6R3-120PS NXP Semiconductors
Description: PSMN6R3-120PS - N-CHANNEL 120V S, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Ta), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 25A, 10V, Power Dissipation (Max): 405W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 207.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11384 pF @ 60 V.
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