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PSMN7R2-100YSFX

PSMN7R2-100YSFX Nexperia

PSMN7R2-100YSF.pdf Hersteller: Nexperia
MOSFETs SOT669 100V 111A N-CH MOSFET
auf Bestellung 2181 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.97 EUR
10+2.24 EUR
100+1.64 EUR
500+1.33 EUR
1000+1.21 EUR
3000+1.12 EUR
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Technische Details PSMN7R2-100YSFX Nexperia

Description: NEXTPOWER 80/100V MOSFETS, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 111A (Tc), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 25A, 10V, Power Dissipation (Max): 194W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 50 V.

Weitere Produktangebote PSMN7R2-100YSFX nach Preis ab 2.14 EUR bis 4.86 EUR

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PSMN7R2-100YSFX PSMN7R2-100YSFX Hersteller : Nexperia USA Inc. PSMN7R2-100YSF.pdf Description: NEXTPOWER 80/100V MOSFETS
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 50 V
auf Bestellung 163 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.86 EUR
10+3.13 EUR
50+2.38 EUR
100+2.14 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PSMN7R2-100YSFX PSMN7R2-100YSFX Hersteller : Nexperia USA Inc. PSMN7R2-100YSF.pdf Description: NEXTPOWER 80/100V MOSFETS
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 50 V
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Im Einkaufswagen  Stück im Wert von  UAH