PSMN7R6-100BSEJ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7110 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 296W (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details PSMN7R6-100BSEJ Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 7110 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 296W (Tc), Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote PSMN7R6-100BSEJ nach Preis ab 2.63 EUR bis 6.35 EUR
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PSMN7R6-100BSEJ | Nexperia |
Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN7R6-100BSEJ | Nexperia |
Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN7R6-100BSEJ | Nexperia |
MOSFETs SOT404 100V 75A |
auf Bestellung 947 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN7R6-100BSEJ | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 75A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 7110 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 296W (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 4817 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PSMN7R6-100BSEJ |
|
Hersteller: Nexperia
Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 2.63 EUR |
| PSMN7R6-100BSEJ |
|
Hersteller: Nexperia
Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 2.64 EUR |
| PSMN7R6-100BSEJ |
|
Hersteller: Nexperia
MOSFETs SOT404 100V 75A
MOSFETs SOT404 100V 75A
auf Bestellung 947 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.46 EUR |
| 10+ | 3.52 EUR |
| 100+ | 2.8 EUR |
| 500+ | 2.75 EUR |
| PSMN7R6-100BSEJ |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7110 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 296W (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7110 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 296W (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 4817 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.35 EUR |
| 10+ | 4.26 EUR |
| 100+ | 2.99 EUR |