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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.08 EUR |
| 10+ | 6.37 EUR |
| 100+ | 5.19 EUR |
| 500+ | 4.44 EUR |
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Technische Details PSMN7R8-120PSQ Nexperia
Description: MOSFET N-CH 120V 70A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 7.9mOhm @ 25A, 10V, Power Dissipation (Max): 349W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: I2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9473 pF @ 60 V.
Weitere Produktangebote PSMN7R8-120PSQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PSMN7R8-120PSQ | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 120V 70A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 25A, 10V Power Dissipation (Max): 349W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9473 pF @ 60 V |
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