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PSMN8R0-40BS,118

PSMN8R0-40BS,118 Nexperia USA Inc.


PSMN8R0-40BS.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 77A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V
auf Bestellung 7200 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+0.89 EUR
1600+0.88 EUR
2400+0.87 EUR
4000+0.85 EUR
5600+0.83 EUR
Mindestbestellmenge: 800
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Technische Details PSMN8R0-40BS,118 Nexperia USA Inc.

Description: MOSFET N-CH 40V 77A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V.

Weitere Produktangebote PSMN8R0-40BS,118 nach Preis ab 0.94 EUR bis 2.66 EUR

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PSMN8R0-40BS,118 PSMN8R0-40BS,118 Hersteller : Nexperia USA Inc. PSMN8R0-40BS.pdf Description: MOSFET N-CH 40V 77A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V
auf Bestellung 7385 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
10+1.93 EUR
100+1.36 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
PSMN8R0-40BS,118 PSMN8R0-40BS,118 Hersteller : Nexperia PSMN8R0-40BS.pdf MOSFETs N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOStechnology
auf Bestellung 2516 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.66 EUR
10+2.02 EUR
100+1.47 EUR
500+0.99 EUR
800+0.94 EUR
Mindestbestellmenge: 2
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PSMN8R0-40BS,118 PSMN8R0-40BS,118 Hersteller : NEXPERIA 3014107413549175psmn8r0-40bs.pdf Trans MOSFET N-CH 40V 77A 3-Pin(2+Tab) D2PAK T/R
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PSMN8R0-40BS,118 Hersteller : NEXPERIA PSMN8R0-40BS.pdf PSMN8R0-40BS.118 SMD N channel transistors
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