PSMN8R0-40PS,127 NEXPERIA
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
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Technische Details PSMN8R0-40PS,127 NEXPERIA
Description: MOSFET N-CH 40V 77A TO220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 86W (Tc), Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V.
Weitere Produktangebote PSMN8R0-40PS,127 nach Preis ab 1.2 EUR bis 2.66 EUR
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PSMN8R0-40PS,127 | Nexperia |
MOSFET PSMN8R0-40PS/SOT78/SIL3P |
auf Bestellung 949 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN8R0-40PS,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 77A TO220ABDrive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V |
auf Bestellung 4880 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN8R0-40PS,127 |
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Hersteller: Nexperia
MOSFET PSMN8R0-40PS/SOT78/SIL3P
MOSFET PSMN8R0-40PS/SOT78/SIL3P
auf Bestellung 949 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.48 EUR |
| 10+ | 2.22 EUR |
| 100+ | 1.7 EUR |
| 500+ | 1.44 EUR |
| PSMN8R0-40PS,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 77A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Description: MOSFET N-CH 40V 77A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
auf Bestellung 4880 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.66 EUR |
| 10+ | 2.21 EUR |
| 100+ | 1.76 EUR |
| 500+ | 1.49 EUR |
| 1000+ | 1.26 EUR |
| 2000+ | 1.2 EUR |



