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PSMN8R0-40PS,127 NEXPERIA


PSMN8R0-40PS.pdf
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
67+1.07 EUR
Mindestbestellmenge: 67 Stücke
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Technische Details PSMN8R0-40PS,127 NEXPERIA

Description: MOSFET N-CH 40V 77A TO220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 86W (Tc), Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V.

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Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
PSMN8R0-40PS,127 PSMN8R0-40PS,127 Nexperia PSMN8R0_40PS-2939089.pdf MOSFET PSMN8R0-40PS/SOT78/SIL3P
auf Bestellung 949 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.48 EUR
10+2.22 EUR
100+1.7 EUR
500+1.44 EUR
Mindestbestellmenge: 2 Stücke
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PSMN8R0-40PS,127 PSMN8R0-40PS,127 Nexperia USA Inc. PSMN8R0-40PS.pdf Description: MOSFET N-CH 40V 77A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
auf Bestellung 4880 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.66 EUR
10+2.21 EUR
100+1.76 EUR
500+1.49 EUR
1000+1.26 EUR
2000+1.2 EUR
Mindestbestellmenge: 7 Stücke
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PSMN8R0-40PS,127 PSMN8R0_40PS-2939089.pdf
Hersteller: Nexperia
MOSFET PSMN8R0-40PS/SOT78/SIL3P
auf Bestellung 949 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.48 EUR
10+2.22 EUR
100+1.7 EUR
500+1.44 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN8R0-40PS,127 PSMN8R0-40PS.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 77A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
auf Bestellung 4880 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.66 EUR
10+2.21 EUR
100+1.76 EUR
500+1.49 EUR
1000+1.26 EUR
2000+1.2 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH