| Anzahl | Preis |
|---|---|
| 1+ | 4.52 EUR |
| 10+ | 3.8 EUR |
| 50+ | 3.59 EUR |
| 100+ | 3.08 EUR |
| 250+ | 2.9 EUR |
| 500+ | 2.73 EUR |
| 1000+ | 2.29 EUR |
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Technische Details PSMN8R5-100PSQ Nexperia
Description: MOSFET N-CH 100V 100A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 5512 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 263W (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote PSMN8R5-100PSQ nach Preis ab 2.45 EUR bis 4.73 EUR
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PSMN8R5-100PSQ | Nexperia USA Inc. |
 Description: MOSFET N-CH 100V 100A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 5512 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 1371 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN8R5-100PSQ |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5512 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5512 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1371 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.73 EUR |
| 10+ | 3.97 EUR |
| 100+ | 3.21 EUR |
| 500+ | 2.86 EUR |
| 1000+ | 2.45 EUR |