Technische Details PSMN8R9-100BSEJ NEXPERIA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 419A; 296W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 74A, Pulsed drain current: 419A, Power dissipation: 296W, Case: D2PAK; SOT404, Gate-source voltage: ±20V, On-state resistance: 27mΩ, Mounting: SMD, Gate charge: 160nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote PSMN8R9-100BSEJ
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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PSMN8R9-100BSEJ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 419A; 296W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 74A Pulsed drain current: 419A Power dissipation: 296W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN8R9-100BSEJ | Hersteller : Nexperia USA Inc. | Description: MOSFET N-CH 100V 108A D2PAK |
Produkt ist nicht verfügbar |
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PSMN8R9-100BSEJ | Hersteller : Nexperia | MOSFET PSMN8R9-100BSE/SOT404/D2PAK |
Produkt ist nicht verfügbar |
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PSMN8R9-100BSEJ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 419A; 296W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 74A Pulsed drain current: 419A Power dissipation: 296W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |