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PSMN9R3-60HSX

PSMN9R3-60HSX Nexperia

PSMN9R3-60HS.pdf
Hersteller: Nexperia
MOSFETs PSMN9R3-60HS/SOT1205/LFPAK56D
auf Bestellung 4116 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.38 EUR
10+2.83 EUR
100+1.94 EUR
500+1.59 EUR
1500+1.13 EUR
3000+1.1 EUR
9000+0.98 EUR
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Technische Details PSMN9R3-60HSX Nexperia

Description: MOSFET 2N-CH 60V 40A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 68W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 2348pF @ 25V, Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 34.2nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56D.

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Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PSMN9R3-60HSX PSMN9R3-60HSX Hersteller : Nexperia USA Inc. PSMN9R3-60HS.pdf Description: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2348pF @ 25V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
auf Bestellung 396 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.4 EUR
10+2.83 EUR
100+1.94 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PSMN9R3-60HSX PSMN9R3-60HSX Hersteller : Nexperia USA Inc. PSMN9R3-60HS.pdf Description: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2348pF @ 25V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
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Im Einkaufswagen  Stück im Wert von  UAH