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PSMN9R5-100BS,118

PSMN9R5-100BS,118 Nexperia USA Inc.

PSMN9R5-100BS.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 89A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4454 pF @ 50 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+2.04 EUR
Mindestbestellmenge: 800
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Technische Details PSMN9R5-100BS,118 Nexperia USA Inc.

Description: MOSFET N-CH 100V 89A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V, Power Dissipation (Max): 211W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4454 pF @ 50 V.

Weitere Produktangebote PSMN9R5-100BS,118 nach Preis ab 2.36 EUR bis 5.23 EUR

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PSMN9R5-100BS,118 PSMN9R5-100BS,118 Hersteller : Nexperia USA Inc. PSMN9R5-100BS.pdf Description: MOSFET N-CH 100V 89A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4454 pF @ 50 V
auf Bestellung 5520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.64 EUR
100+ 3.01 EUR
Mindestbestellmenge: 5
PSMN9R5-100BS,118 PSMN9R5-100BS,118 Hersteller : Nexperia PSMN9R5_100BS-2939066.pdf MOSFET PSMN9R5-100BS/SOT404/D2PAK
auf Bestellung 1357 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
10+5.23 EUR
13+ 4.32 EUR
100+ 3.46 EUR
250+ 3.2 EUR
500+ 2.89 EUR
800+ 2.47 EUR
2400+ 2.36 EUR
Mindestbestellmenge: 10
PSMN9R5-100BS,118 Hersteller : NEXPERIA PSMN9R5-100BS.pdf PSMN9R5-100BS.118 SMD N channel transistors
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