PSMNR67-30YLEX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PSMNR67-30YLE/SOT1023/4 LEADS
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 365A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12417 pF @ 15 V
| Anzahl | Preis |
|---|---|
| 4+ | 4.52 EUR |
| 10+ | 3.82 EUR |
| 100+ | 2.96 EUR |
| 500+ | 2.56 EUR |
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Technische Details PSMNR67-30YLEX Nexperia USA Inc.
Description: PSMNR67-30YLE/SOT1023/4 LEADS, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 365A (Tc), Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V, Power Dissipation (Max): 333W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 2mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12417 pF @ 15 V.
Weitere Produktangebote PSMNR67-30YLEX nach Preis ab 2.31 EUR bis 7.23 EUR
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PSMNR67-30YLEX | Hersteller : Nexperia |
MOSFETs SOT1023 N-CH 30V 365A |
auf Bestellung 1489 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMNR67-30YLEX | Hersteller : Nexperia USA Inc. |
Description: PSMNR67-30YLE/SOT1023/4 LEADS Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 365A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 2mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12417 pF @ 15 V |
Produkt ist nicht verfügbar |
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| PSMNR67-30YLEX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 361A; Idm: 2.07kA; 333W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 361A Pulsed drain current: 2.07kA Power dissipation: 333W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Gate charge: 185nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |