| Anzahl | Preis |
|---|---|
| 1+ | 6.46 EUR |
| 10+ | 4.26 EUR |
| 100+ | 2.99 EUR |
| 500+ | 2.52 EUR |
| 1000+ | 1.9 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMNR82-30YLEX Nexperia
Description: PSMNR82-30YLE/SOT669/LFPAK, Input Capacitance (Ciss) (Max) @ Vds: 10131 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.2V @ 2mA, Power Dissipation (Max): 268W (Tc), Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 330A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote PSMNR82-30YLEX nach Preis ab 2.53 EUR bis 6.69 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PSMNR82-30YLEX | Hersteller : Nexperia USA Inc. |
 Description: PSMNR82-30YLE/SOT669/LFPAKInput Capacitance (Ciss) (Max) @ Vds: 10131 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 2mA Power Dissipation (Max): 268W (Tc) Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 330A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
auf Bestellung 1207 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
PSMNR82-30YLEX | Hersteller : Nexperia USA Inc. |
Description: PSMNR82-30YLE/SOT669/LFPAK Input Capacitance (Ciss) (Max) @ Vds: 10131 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 2mA Power Dissipation (Max): 268W (Tc) Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 330A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |