auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.28 EUR |
| 10+ | 3.94 EUR |
| 100+ | 3.17 EUR |
| 500+ | 2.48 EUR |
| 800+ | 2.39 EUR |
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Technische Details PSMNR90-30BL,118 Nexperia
Description: MOSFET N-CH 30V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V, Power Dissipation (Max): 306W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V.
Weitere Produktangebote PSMNR90-30BL,118 nach Preis ab 3.18 EUR bis 5.46 EUR
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PSMNR90-30BL,118 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 120A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V |
auf Bestellung 1043 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMNR90-30BL,118 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R |
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PSMNR90-30BL,118 | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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PSMNR90-30BL,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 306W; D2PAK,SOT404 Power dissipation: 306W Mounting: SMD Kind of package: reel; tape Case: D2PAK; SOT404 Polarisation: unipolar Gate charge: 243nC On-state resistance: 1.65mΩ Gate-source voltage: ±20V Drain current: 120A Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMNR90-30BL,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V |
Produkt ist nicht verfügbar |
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PSMNR90-30BL,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 306W; D2PAK,SOT404 Power dissipation: 306W Mounting: SMD Kind of package: reel; tape Case: D2PAK; SOT404 Polarisation: unipolar Gate charge: 243nC On-state resistance: 1.65mΩ Gate-source voltage: ±20V Drain current: 120A Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |