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PSMNR90-30BL,118

PSMNR90-30BL,118 Nexperia USA Inc.

PSMNR90-30BL.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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Technische Details PSMNR90-30BL,118 Nexperia USA Inc.

Description: MOSFET N-CH 30V 120A D2PAK, Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2.2V @ 1mA, Power Dissipation (Max): 306W (Tc).

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PSMNR90-30BL,118 PSMNR90-30BL,118 Nexperia USA Inc. PSMNR90-30BL.pdf Description: MOSFET N-CH 30V 120A D2PAK
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 306W (Tc)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMNR90-30BL,118 PSMNR90-30BL,118 Nexperia 1732093802429423psmnr90-30bl.pdf Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMNR90-30BL,118 PSMNR90-30BL.pdf
PSMNR90-30BL,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 306W (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMNR90-30BL,118 1732093802429423psmnr90-30bl.pdf
PSMNR90-30BL,118
Hersteller: Nexperia
Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH