auf Bestellung 1768 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.03 EUR |
| 10+ | 3.34 EUR |
| 100+ | 2.66 EUR |
| 250+ | 2.45 EUR |
| 500+ | 2.22 EUR |
| 1000+ | 1.9 EUR |
| 2500+ | 1.8 EUR |
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Technische Details PSMP050N10NS2_T0_00601 Panjit
Description: 100V/ 5MOHM/ LOW FOM MOSFET, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V, Power Dissipation (Max): 138W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 270µA, Supplier Device Package: TO-220AB-L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V.
Weitere Produktangebote PSMP050N10NS2_T0_00601 nach Preis ab 1.92 EUR bis 4.05 EUR
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PSMP050N10NS2_T0_00601 | Hersteller : Panjit International Inc. |
 Description: 100V/ 5MOHM/ LOW FOM MOSFETPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Power Dissipation (Max): 138W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 270µA Supplier Device Package: TO-220AB-L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V |
auf Bestellung 1848 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMP050N10NS2_T0_00601 Produktcode: 191410 |
Verschiedene Bauteile > Verschiedene Bauteile 1 |
Produkt ist nicht verfügbar
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| PSMP050N10NS2_T0_00601 | Hersteller : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 138W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMP050N10NS2_T0_00601 | Hersteller : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 138W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |