PSMP050N10NS2_T0_00601 PanJit Semiconductor
Hersteller: PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W
Case: TO220ABL
Kind of package: tube
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 138W
Polarisation: unipolar
Gate charge: 53nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 3.32 EUR |
| 34+ | 2.10 EUR |
| 50+ | 1.72 EUR |
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Technische Details PSMP050N10NS2_T0_00601 PanJit Semiconductor
Description: 100V/ 5MOHM/ LOW FOM MOSFET, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V, Power Dissipation (Max): 138W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 270µA, Supplier Device Package: TO-220AB-L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V.
Weitere Produktangebote PSMP050N10NS2_T0_00601 nach Preis ab 1.67 EUR bis 4.52 EUR
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PSMP050N10NS2_T0_00601 | Hersteller : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 138W Case: TO220ABL Kind of package: tube Drain-source voltage: 100V Drain current: 120A On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 138W Polarisation: unipolar Gate charge: 53nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 480A Mounting: THT |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMP050N10NS2_T0_00601 | Hersteller : Panjit International Inc. |
Description: 100V/ 5MOHM/ LOW FOM MOSFET Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Power Dissipation (Max): 138W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 270µA Supplier Device Package: TO-220AB-L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V |
auf Bestellung 1767 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMP050N10NS2_T0_00601 | Hersteller : Panjit |
MOSFETs 100V 5mohm Low FOM MOSFET |
auf Bestellung 1733 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMP050N10NS2_T0_00601 Produktcode: 191410
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