PSMP050N10NS2_T0_00601
Produktcode: 191410
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Weitere Produktangebote PSMP050N10NS2_T0_00601 nach Preis ab 1.67 EUR bis 4.26 EUR
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PSMP050N10NS2_T0_00601 | Panjit |
MOSFETs 100V 5mohm Low FOM MOSFET |
auf Bestellung 1590 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMP050N10NS2_T0_00601 | Panjit International Inc. |
Description: 100V/ 5MOHM/ LOW FOM MOSFETPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Power Dissipation (Max): 138W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 270µA Supplier Device Package: TO-220AB-L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V |
auf Bestellung 1767 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMP050N10NS2_T0_00601 |
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Hersteller: Panjit
MOSFETs 100V 5mohm Low FOM MOSFET
MOSFETs 100V 5mohm Low FOM MOSFET
auf Bestellung 1590 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.21 EUR |
| 10+ | 2.08 EUR |
| 100+ | 1.85 EUR |
| 500+ | 1.78 EUR |
| PSMP050N10NS2_T0_00601 |
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Hersteller: Panjit International Inc.
Description: 100V/ 5MOHM/ LOW FOM MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V
Description: 100V/ 5MOHM/ LOW FOM MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V
auf Bestellung 1767 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.26 EUR |
| 50+ | 2.21 EUR |
| 100+ | 2.1 EUR |
| 500+ | 1.79 EUR |
| 1000+ | 1.67 EUR |


