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PSMP055N08NS1_T0_00601

PSMP055N08NS1_T0_00601 Panjit

PSMP055N08NS1.pdf Hersteller: Panjit
MOSFETs 80V 5.5mohm Tjmax 175C MV MOSFET
auf Bestellung 1822 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.45 EUR
10+1.94 EUR
100+1.72 EUR
250+1.70 EUR
500+1.39 EUR
1000+1.25 EUR
10000+1.24 EUR
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Technische Details PSMP055N08NS1_T0_00601 Panjit

Description: 80V/ 5.5MOHM / TJMAX 175C MV MOS, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 111A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 3.75V @ 250µA, Supplier Device Package: TO-220AB-L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 7 V, Input Capacitance (Ciss) (Max) @ Vds: 4773 pF @ 40 V.

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PSMP055N08NS1_T0_00601 PSMP055N08NS1_T0_00601 Hersteller : Panjit International Inc. PSMP055N08NS1.pdf Description: 80V/ 5.5MOHM / TJMAX 175C MV MOS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.75V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 4773 pF @ 40 V
auf Bestellung 1993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.05 EUR
50+1.98 EUR
100+1.78 EUR
500+1.42 EUR
1000+1.31 EUR
Mindestbestellmenge: 5
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PSMP055N08NS1_T0_00601 Hersteller : PanJit Semiconductor PSMP055N08NS1.pdf PSMP055N08NS1-T0 THT N channel transistors
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