PSMP055N08NS1_T0_00601 PanJit Semiconductor
Hersteller: PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Pulsed drain current: 360A
Power dissipation: 136W
Case: TO220ABL
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 34+ | 2.12 EUR |
| 61+ | 1.19 EUR |
| 74+ | 0.97 EUR |
| 79+ | 0.92 EUR |
| 1000+ | 0.9 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMP055N08NS1_T0_00601 PanJit Semiconductor
Description: 80V/ 5.5MOHM / TJMAX 175C MV MOS, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 111A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 3.75V @ 250µA, Supplier Device Package: TO-220AB-L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 7 V, Input Capacitance (Ciss) (Max) @ Vds: 4773 pF @ 40 V.
Weitere Produktangebote PSMP055N08NS1_T0_00601 nach Preis ab 0.92 EUR bis 4.05 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
PSMP055N08NS1_T0_00601 | Hersteller : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 111A Pulsed drain current: 360A Power dissipation: 136W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 65.8nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
PSMP055N08NS1_T0_00601 | Hersteller : Panjit |
MOSFETs 80V 5.5mohm Tjmax 175C MV MOSFET |
auf Bestellung 1792 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
PSMP055N08NS1_T0_00601 | Hersteller : Panjit International Inc. |
Description: 80V/ 5.5MOHM / TJMAX 175C MV MOS Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 111A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.75V @ 250µA Supplier Device Package: TO-220AB-L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 4773 pF @ 40 V |
auf Bestellung 1993 Stücke: Lieferzeit 10-14 Tag (e) |
|