PSMP055N08NS1_T0_00601 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB
Case: TO220AB
Mounting: THT
Pulsed drain current: 360A
Power dissipation: 136W
Gate charge: 65.8nC
Polarisation: unipolar
Drain current: 111A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 7mΩ
| Anzahl | Privatkunde |
|---|---|
| 34+ | 2.55 EUR |
| 57+ | 1.5 EUR |
| 63+ | 1.36 EUR |
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Technische Details PSMP055N08NS1_T0_00601 PanJit Semiconductor
Description: 80V/ 5.5MOHM / TJMAX 175C MV MOS, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 111A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 3.75V @ 250µA, Supplier Device Package: TO-220AB-L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 7 V, Input Capacitance (Ciss) (Max) @ Vds: 4773 pF @ 40 V.
Weitere Produktangebote PSMP055N08NS1_T0_00601 nach Preis ab 1.06 EUR bis 3.42 EUR
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PSMP055N08NS1_T0_00601 | Panjit |
MOSFETs 80V 5.5mohm Tjmax 175C MV MOSFET |
auf Bestellung 1792 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMP055N08NS1_T0_00601 | Panjit International Inc. |
Description: 80V/ 5.5MOHM / TJMAX 175C MV MOS Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 111A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.75V @ 250µA Supplier Device Package: TO-220AB-L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 4773 pF @ 40 V |
auf Bestellung 1993 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMP055N08NS1_T0_00601 |
|
Hersteller: Panjit
MOSFETs 80V 5.5mohm Tjmax 175C MV MOSFET
MOSFETs 80V 5.5mohm Tjmax 175C MV MOSFET
auf Bestellung 1792 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.42 EUR |
| 10+ | 1.64 EUR |
| 100+ | 1.48 EUR |
| 500+ | 1.39 EUR |
| PSMP055N08NS1_T0_00601 |
|
Hersteller: Panjit International Inc.
Description: 80V/ 5.5MOHM / TJMAX 175C MV MOS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.75V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 4773 pF @ 40 V
Description: 80V/ 5.5MOHM / TJMAX 175C MV MOS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.75V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 4773 pF @ 40 V
auf Bestellung 1993 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.42 EUR |
| 50+ | 1.64 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.06 EUR |