Weitere Produktangebote PSMP061-60YEX транзистор nach Preis ab 0.62 EUR bis 2.95 EUR
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PSMP061-60YEX | Nexperia |
 MOSFETs PSMP061-60YE/SOT669/LFPAK |
auf Bestellung 1763 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMP061-60YEX | Nexperia USA Inc. |
Description: PSMP061-60YE/SOT669/LFPAK Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 904 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMP061-60YEX |
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Hersteller: Nexperia
MOSFETs PSMP061-60YE/SOT669/LFPAK
MOSFETs PSMP061-60YE/SOT669/LFPAK
auf Bestellung 1763 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.08 EUR |
| 10+ | 1.39 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.77 EUR |
| 1500+ | 0.69 EUR |
| 3000+ | 0.62 EUR |
| PSMP061-60YEX |
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Hersteller: Nexperia USA Inc.
Description: PSMP061-60YE/SOT669/LFPAK
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Description: PSMP061-60YE/SOT669/LFPAK
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 904 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.95 EUR |
| 12+ | 1.84 EUR |
| 50+ | 1.38 EUR |
| 100+ | 1.23 EUR |