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PSMP075N15NS1_T0_00601

PSMP075N15NS1_T0_00601 Panjit

PSMP075N15NS1-3196420.pdf Hersteller: Panjit
MOSFET 150V N-Channel Enhancement Mode MOSFET
auf Bestellung 1923 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.81 EUR
10+6.86 EUR
50+5.83 EUR
100+5.28 EUR
250+5.00 EUR
500+4.70 EUR
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Technische Details PSMP075N15NS1_T0_00601 Panjit

Description: 150V N-CHANNEL ENHANCEMENT MODE, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 125A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V, Power Dissipation (Max): 258.6W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB-L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6511 pF @ 75 V.

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PSMP075N15NS1_T0_00601 PSMP075N15NS1_T0_00601 Hersteller : Panjit International Inc. PSMP075N15NS1.pdf Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 258.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6511 pF @ 75 V
auf Bestellung 1877 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.83 EUR
10+6.57 EUR
100+5.32 EUR
500+4.73 EUR
1000+4.05 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PSMP075N15NS1_T0_00601 Hersteller : PanJit Semiconductor PSMP075N15NS1.pdf PSMP075N15NS1-T0 THT N channel transistors
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