| Anzahl | Preis |
|---|---|
| 1+ | 7.81 EUR |
| 10+ | 6.86 EUR |
| 50+ | 5.83 EUR |
| 100+ | 5.28 EUR |
| 250+ | 5 EUR |
| 500+ | 4.7 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMP075N15NS1_T0_00601 Panjit
Description: 150V N-CHANNEL ENHANCEMENT MODE, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 125A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V, Power Dissipation (Max): 258.6W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB-L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6511 pF @ 75 V.
Weitere Produktangebote PSMP075N15NS1_T0_00601 nach Preis ab 4.05 EUR bis 7.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PSMP075N15NS1_T0_00601 | Panjit International Inc. |
 Description: 150V N-CHANNEL ENHANCEMENT MODEPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 125A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V Power Dissipation (Max): 258.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB-L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6511 pF @ 75 V |
auf Bestellung 1877 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PSMP075N15NS1_T0_00601 |
|
Hersteller: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 258.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6511 pF @ 75 V
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 258.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6511 pF @ 75 V
auf Bestellung 1877 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.83 EUR |
| 10+ | 6.57 EUR |
| 100+ | 5.32 EUR |
| 500+ | 4.73 EUR |
| 1000+ | 4.05 EUR |