Produkte > INFINEON TECHNOLOGIES > PTAB182002TCV2R250XTMA1

PTAB182002TCV2R250XTMA1 Infineon Technologies


PTAB182002TC_Rev4_2014-07-01.pdf
Hersteller: Infineon Technologies
Description: IC RF FET LDMOS 190W H-49248H-4
Current - Test: 520 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: H-49248H-4
Technology: LDMOS
Gain: 14.8dB
Power - Output: 29W
Frequency: 1.805GHz ~ 1.88GHz
Mounting Type: Surface Mount
Current Rating (Amps): 10µA
Package / Case: H-49248H-4
Packaging: Tape & Reel (TR)
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Technische Details PTAB182002TCV2R250XTMA1 Infineon Technologies

Description: IC RF FET LDMOS 190W H-49248H-4, Current - Test: 520 mA, Voltage - Test: 28 V, Voltage - Rated: 65 V, Part Status: Obsolete, Supplier Device Package: H-49248H-4, Technology: LDMOS, Gain: 14.8dB, Power - Output: 29W, Frequency: 1.805GHz ~ 1.88GHz, Mounting Type: Surface Mount, Current Rating (Amps): 10µA, Package / Case: H-49248H-4, Packaging: Tape & Reel (TR).