Produkte > NEXPERIA > PXN2R9-100RSJ
PXN2R9-100RSJ

PXN2R9-100RSJ Nexperia


Hersteller: Nexperia
MOSFETs 30 V, N-channel Trench MOSFET
auf Bestellung 168 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.92 EUR
10+2.85 EUR
100+2.25 EUR
500+1.88 EUR
1000+1.62 EUR
3000+1.54 EUR
6000+1.49 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PXN2R9-100RSJ Nexperia

Description: PXN2R9-100RS/SOT8038/MLPAK56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Ta), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V, Power Dissipation (Max): 181W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: MLPAK56, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4892 pF @ 50 V.

Weitere Produktangebote PXN2R9-100RSJ

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PXN2R9-100RSJ Hersteller : Nexperia USA Inc. Description: PXN2R9-100RS/SOT8038/MLPAK56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Ta)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V
Power Dissipation (Max): 181W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MLPAK56
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4892 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH