PXN2R9-100RSJ Nexperia
auf Bestellung 168 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.73 EUR |
| 10+ | 2.69 EUR |
| 100+ | 2.15 EUR |
| 500+ | 1.8 EUR |
| 1000+ | 1.54 EUR |
| 3000+ | 1.46 EUR |
| 6000+ | 1.42 EUR |
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Technische Details PXN2R9-100RSJ Nexperia
Description: PXN2R9-100RS/SOT8038/MLPAK56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Ta), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V, Power Dissipation (Max): 181W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: MLPAK56, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4892 pF @ 50 V.
Weitere Produktangebote PXN2R9-100RSJ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| PXN2R9-100RSJ | Hersteller : Nexperia USA Inc. |
Description: PXN2R9-100RS/SOT8038/MLPAK56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Ta) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V Power Dissipation (Max): 181W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: MLPAK56 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4892 pF @ 50 V |
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