PXN6R7-30QLJ NEXPERIA
Hersteller: NEXPERIA
Description: NEXPERIA - PXN6R7-30QLJ - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
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Technische Details PXN6R7-30QLJ NEXPERIA
Description: PXN6R7-30QL/SOT8002/MLPAK33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 62A (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 12.7A, 10V, Power Dissipation (Max): 1.7W (Ta), 40.3W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: MLPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V.
Weitere Produktangebote PXN6R7-30QLJ nach Preis ab 0.38 EUR bis 2.15 EUR
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PXN6R7-30QLJ | Nexperia USA Inc. |
Description: PXN6R7-30QL/SOT8002/MLPAK33 Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: MLPAK33 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1.7W (Ta), 40.3W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 12.7A, 10V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 62A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 81 Stücke: Lieferzeit 10-14 Tag (e) |
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PXN6R7-30QLJ | Nexperia |
MOSFETs PXN6R7-30QL/SOT8002/MLPAK33 |
auf Bestellung 946 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Nexperia USA Inc.
Description: PXN6R7-30QL/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 40.3W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 12.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: PXN6R7-30QL/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 40.3W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 12.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 81 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.83 EUR |
| 36+ | 0.6 EUR |
| 40+ | 0.52 EUR |
| PXN6R7-30QLJ |
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Hersteller: Nexperia
MOSFETs PXN6R7-30QL/SOT8002/MLPAK33
MOSFETs PXN6R7-30QL/SOT8002/MLPAK33
auf Bestellung 946 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.15 EUR |
| 10+ | 1.54 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.58 EUR |
| 3000+ | 0.5 EUR |
| 6000+ | 0.38 EUR |