PXN7R7-25QLJ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PXN7R7-25QL/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 11.8A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 12.5 V
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Technische Details PXN7R7-25QLJ Nexperia USA Inc.
Description: PXN7R7-25QL/SOT8002/MLPAK33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 32A (Tc), Rds On (Max) @ Id, Vgs: 7.7mOhm @ 11.8A, 10V, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: MLPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 12.5 V.
Weitere Produktangebote PXN7R7-25QLJ nach Preis ab 0.34 EUR bis 0.74 EUR
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PXN7R7-25QLJ | Nexperia USA Inc. |
Description: PXN7R7-25QL/SOT8002/MLPAK33 Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 12.5 V Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: MLPAK33 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 11.8A, 10V Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 5317 Stücke: Lieferzeit 10-14 Tag (e) |
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| PXN7R7-25QLJ |
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Hersteller: Nexperia USA Inc.
Description: PXN7R7-25QL/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 11.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: PXN7R7-25QL/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 11.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 5317 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 35+ | 0.52 EUR |
| 39+ | 0.46 EUR |
| 100+ | 0.4 EUR |
| 250+ | 0.37 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.34 EUR |