| Anzahl | Preis |
|---|---|
| 3+ | 1.03 EUR |
| 10+ | 0.71 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.34 EUR |
| 3000+ | 0.3 EUR |
| 6000+ | 0.28 EUR |
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Technische Details PXP015-30QLJ Nexperia
Description: P-CHANNEL TRENCH MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 36.9 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: MLPAK33, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.7W (Ta), 16W (Tc), Rds On (Max) @ Id, Vgs: 15.8mOhm @ 8.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24.7A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote PXP015-30QLJ nach Preis ab 0.62 EUR bis 1.55 EUR
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PXP015-30QLJ | Hersteller : Nexperia USA Inc. |
 Description: P-CHANNEL TRENCH MOSFETInput Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 36.9 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: MLPAK33 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.7W (Ta), 16W (Tc) Rds On (Max) @ Id, Vgs: 15.8mOhm @ 8.1A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 537 Stücke: Lieferzeit 10-14 Tag (e) |
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PXP015-30QLJ | Hersteller : Nexperia USA Inc. |
Description: P-CHANNEL TRENCH MOSFET Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 36.9 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: MLPAK33 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.7W (Ta), 16W (Tc) Rds On (Max) @ Id, Vgs: 15.8mOhm @ 8.1A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |