PXP3R7-12QUJ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PXP3R7-12QU/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 98.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 7+ | 2.82 EUR |
| 10+ | 1.79 EUR |
| 100+ | 1.2 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.86 EUR |
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Technische Details PXP3R7-12QUJ Nexperia USA Inc.
Description: PXP3R7-12QU/SOT8002/MLPAK33, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 6 V, Power Dissipation (Max): 1.8W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18.6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 98.6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: MLPAK33, Vgs(th) (Max) @ Id: 900mV @ 250µA.
Weitere Produktangebote PXP3R7-12QUJ nach Preis ab 0.76 EUR bis 3.06 EUR
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PXP3R7-12QUJ | Hersteller : Nexperia |
MOSFETs SOT8002 P-CH 12V 18.7A |
auf Bestellung 2601 Stücke: Lieferzeit 10-14 Tag (e) |
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PXP3R7-12QUJ | Hersteller : Nexperia USA Inc. |
Description: PXP3R7-12QU/SOT8002/MLPAK33 Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 6 V Power Dissipation (Max): 1.8W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 98.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: MLPAK33 Vgs(th) (Max) @ Id: 900mV @ 250µA |
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