PXP8R3-20QXJ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PXP8R3-20QX/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 91.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 12.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 65.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.47 EUR |
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Technische Details PXP8R3-20QXJ Nexperia USA Inc.
Description: PXP8R3-20QX/SOT8002/MLPAK33, Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 91.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: MLPAK33, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Power Dissipation (Max): 1.8W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 12.3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 65.1A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote PXP8R3-20QXJ nach Preis ab 0.38 EUR bis 1.9 EUR
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PXP8R3-20QXJ | Hersteller : Nexperia |
MOSFETs SOT8002 P-CH 20V 12.4A |
auf Bestellung 11782 Stücke: Lieferzeit 10-14 Tag (e) |
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PXP8R3-20QXJ | Hersteller : Nexperia USA Inc. |
Description: PXP8R3-20QX/SOT8002/MLPAK33 Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 91.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: MLPAK33 Vgs(th) (Max) @ Id: 1.25V @ 250µA Power Dissipation (Max): 1.8W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 12.3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 65.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 5804 Stücke: Lieferzeit 10-14 Tag (e) |
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