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PXP9R1-30QLJ

PXP9R1-30QLJ Nexperia USA Inc.


Hersteller: Nexperia USA Inc.
Description: PXP9R1-30QL/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 10.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 57.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2117 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
25+0.71 EUR
28+0.64 EUR
100+0.56 EUR
250+0.52 EUR
500+0.49 EUR
1000+0.48 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PXP9R1-30QLJ Nexperia USA Inc.

Description: PXP9R1-30QL/SOT8002/MLPAK33, Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: MLPAK33, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.8W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 10.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 57.2A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote PXP9R1-30QLJ nach Preis ab 0.47 EUR bis 1.64 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PXP9R1-30QLJ PXP9R1-30QLJ Hersteller : Nexperia MOSFETs SOT8002 P-CH 30V 10.9A
auf Bestellung 5078 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.64 EUR
10+1.01 EUR
100+0.66 EUR
500+0.63 EUR
3000+0.47 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
PXP9R1-30QLJ PXP9R1-30QLJ Hersteller : Nexperia USA Inc. Description: PXP9R1-30QL/SOT8002/MLPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 10.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 57.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH