PZT651T1G onsemi
Hersteller: onsemi
Description: TRANS NPN 60V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS NPN 60V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.51 EUR |
2000+ | 0.45 EUR |
5000+ | 0.43 EUR |
10000+ | 0.4 EUR |
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Technische Details PZT651T1G onsemi
Description: TRANS NPN 60V 2A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V, Frequency - Transition: 75MHz, Supplier Device Package: SOT-223 (TO-261), Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 800 mW.
Weitere Produktangebote PZT651T1G nach Preis ab 0.62 EUR bis 1.35 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
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PZT651T1G | Hersteller : onsemi | Bipolar Transistors - BJT 2A 80V NPN |
auf Bestellung 17038 Stücke: Lieferzeit 14-28 Tag (e) |
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PZT651T1G | Hersteller : onsemi |
Description: TRANS NPN 60V 2A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V Frequency - Transition: 75MHz Supplier Device Package: SOT-223 (TO-261) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
auf Bestellung 21520 Stücke: Lieferzeit 21-28 Tag (e) |
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PZT651T1G | Hersteller : ON Semiconductor | Trans GP BJT NPN 60V 2A 800mW 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |