QH8JC5TCR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.96 EUR |
| 6000+ | 0.9 EUR |
| 9000+ | 0.87 EUR |
| 15000+ | 0.83 EUR |
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Technische Details QH8JC5TCR Rohm Semiconductor
Description: MOSFET 2P-CH 60V 3.5A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V, Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active.
Weitere Produktangebote QH8JC5TCR nach Preis ab 0.88 EUR bis 3.53 EUR
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QH8JC5TCR | ROHM Semiconductor |
MOSFETs -60V Dual Pch+Pch Small Signal MOSFET |
auf Bestellung 21785 Stücke: Lieferzeit 10-14 Tag (e) |
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QH8JC5TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 60V 3.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 57658 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8JC5TCR |
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Hersteller: ROHM Semiconductor
MOSFETs -60V Dual Pch+Pch Small Signal MOSFET
MOSFETs -60V Dual Pch+Pch Small Signal MOSFET
auf Bestellung 21785 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.47 EUR |
| 10+ | 2.23 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1.07 EUR |
| 3000+ | 0.95 EUR |
| 6000+ | 0.88 EUR |
| QH8JC5TCR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2P-CH 60V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 57658 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.53 EUR |
| 10+ | 2.25 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 1.09 EUR |