QH8K22TCR

QH8K22TCR Rohm Semiconductor


datasheet?p=QH8K22&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 6.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 10µA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 15000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.43 EUR
6000+ 0.4 EUR
9000+ 0.37 EUR
Mindestbestellmenge: 3000
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Technische Details QH8K22TCR Rohm Semiconductor

Description: MOSFET 2N-CH 40V 6.5A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 20V, Rds On (Max) @ Id, Vgs: 46mOhm @ 6.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 10µA, Supplier Device Package: TSMT8, Part Status: Active.

Weitere Produktangebote QH8K22TCR nach Preis ab 0.48 EUR bis 1.64 EUR

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Preis ohne MwSt
QH8K22TCR QH8K22TCR Hersteller : Rohm Semiconductor datasheet?p=QH8K22&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 40V 6.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 10µA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 18121 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.13 EUR
19+ 0.97 EUR
100+ 0.67 EUR
500+ 0.56 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 16
QH8K22TCR QH8K22TCR Hersteller : ROHM Semiconductor datasheet?p=QH8K22&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET QH8K22 is low on - resistance MOSFET for Switching. 40V Nch+Nch Small Signal MOSFET.
auf Bestellung 2407 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
32+1.64 EUR
37+ 1.43 EUR
100+ 0.99 EUR
500+ 0.83 EUR
1000+ 0.7 EUR
3000+ 0.63 EUR
6000+ 0.59 EUR
Mindestbestellmenge: 32