QH8K51TR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET 2N-CH 100V 2A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.7 EUR |
| 6000+ | 0.67 EUR |
| 9000+ | 0.64 EUR |
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Technische Details QH8K51TR Rohm Semiconductor
Description: MOSFET 2N-CH 100V 2A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active.
Weitere Produktangebote QH8K51TR nach Preis ab 0.65 EUR bis 1.71 EUR
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QH8K51TR | Hersteller : ROHM Semiconductor |
MOSFET QH8K51 is the low on - resistance MOSFET for switching application. 100V Nch+Nch Small Signal MOSFET. |
auf Bestellung 5985 Stücke: Lieferzeit 10-14 Tag (e) |
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QH8K51TR | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 100V 2A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 16760 Stücke: Lieferzeit 10-14 Tag (e) |
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