| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.43 EUR |
| 10+ | 1.24 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.61 EUR |
| 3000+ | 0.55 EUR |
| 6000+ | 0.51 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details QH8KA2TCR ROHM Semiconductor
Description: MOSFET 2N-CH 30V 4.5A TSMT8, Part Status: Active, Supplier Device Package: TSMT8, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V, Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 1.1W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote QH8KA2TCR nach Preis ab 0.57 EUR bis 2.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
QH8KA2TCR | Rohm Semiconductor |
 Description: MOSFET 2N-CH 30V 4.5A TSMT8Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 1886 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
QH8KA2TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 4.5A TSMT8 Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) |
auf Bestellung 2800 Stücke: Lieferzeit 10-14 Tag (e) |
|
| QH8KA2TCR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 1886 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.99 EUR |
| 17+ | 1.24 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.57 EUR |
| QH8KA2TCR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.2 EUR |
| 16+ | 1.38 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.64 EUR |