QH8M22TCR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N/P-CH 40V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.80 EUR |
| 6000+ | 0.75 EUR |
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Technische Details QH8M22TCR Rohm Semiconductor
Description: MOSFET N/P-CH 40V 4.5A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V, Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active.
Weitere Produktangebote QH8M22TCR nach Preis ab 0.79 EUR bis 2.39 EUR
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QH8M22TCR | Hersteller : ROHM Semiconductor |
MOSFET QH8M22 is the high reliability transistor, suitable for switching applications. 40V Nch+Pch Power MOSFET. |
auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
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QH8M22TCR | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 40V 4.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 9928 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8M22TCR | Hersteller : ROHM SEMICONDUCTOR |
QH8M22TCR Multi channel transistors |
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