| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.11 EUR |
| 10+ | 0.92 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.48 EUR |
| 3000+ | 0.43 EUR |
| 6000+ | 0.39 EUR |
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Technische Details QH8MA2TCR ROHM Semiconductor
Description: MOSFET N/P-CH 30V 4.5A/3A TSMT8, Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: TSMT8, Vgs(th) (Max) @ Id: 2.5V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V, Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.25W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ).
Weitere Produktangebote QH8MA2TCR nach Preis ab 0.52 EUR bis 1.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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QH8MA2TCR | Rohm Semiconductor |
 Description: MOSFET N/P-CH 30V 4.5A/3A TSMT8Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A Drain to Source Voltage (Vdss): 30V Power - Max: 1.25W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 1269 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MA2TCR | Rohm |
Транзистор польовий N+P, Id, A = 4.5, 3, Udss, В = 30, Ciss, пФ @ Uds, В = 365 @ 10, Qg, нКл = 8,4 @ 10 В, Rds = 35 мОм @ 4.5 А, 10 В, Ugs(th) = 2,5 В @ 1 мА, Р, Вт = 1,25, Тексп, °C = -55...+150, ton = 7,2, toff = 12,... Транзистори Корпус: TSMT-8 Од. ви Anzahl je Verpackung: 3000 Stücke |
verfügbar 10 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| QH8MA2TCR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 4.5A/3A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 30V 4.5A/3A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 1269 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.84 EUR |
| 19+ | 1.14 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.52 EUR |
| QH8MA2TCR |
|
Hersteller: Rohm
Транзистор польовий N+P, Id, A = 4.5, 3, Udss, В = 30, Ciss, пФ @ Uds, В = 365 @ 10, Qg, нКл = 8,4 @ 10 В, Rds = 35 мОм @ 4.5 А, 10 В, Ugs(th) = 2,5 В @ 1 мА, Р, Вт = 1,25, Тексп, °C = -55...+150, ton = 7,2, toff = 12,... Транзистори Корпус: TSMT-8 Од. ви
Anzahl je Verpackung: 3000 Stücke
Транзистор польовий N+P, Id, A = 4.5, 3, Udss, В = 30, Ciss, пФ @ Uds, В = 365 @ 10, Qg, нКл = 8,4 @ 10 В, Rds = 35 мОм @ 4.5 А, 10 В, Ugs(th) = 2,5 В @ 1 мА, Р, Вт = 1,25, Тексп, °C = -55...+150, ton = 7,2, toff = 12,... Транзистори Корпус: TSMT-8 Од. ви
Anzahl je Verpackung: 3000 Stücke
verfügbar 10 Stücke: