auf Bestellung 2326 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.41 EUR |
| 10+ | 1.16 EUR |
| 100+ | 0.90 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.62 EUR |
| 3000+ | 0.59 EUR |
| 6000+ | 0.56 EUR |
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Technische Details QH8MA4TCR ROHM Semiconductor
Description: MOSFET N/P-CH 30V 9A/8A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9A, 8A, Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V, Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active.
Weitere Produktangebote QH8MA4TCR nach Preis ab 0.68 EUR bis 2.29 EUR
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QH8MA4TCR | Hersteller : Rohm Semiconductor |
 Description: MOSFET N/P-CH 30V 9A/8A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 8A Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 2838 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MA4TCR | Hersteller : ROHM SEMICONDUCTOR |
QH8MA4TCR Multi channel transistors |
Produkt ist nicht verfügbar |
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QH8MA4TCR | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 9A/8A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 8A Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
Produkt ist nicht verfügbar |