QH8MA4TCR

QH8MA4TCR Rohm Semiconductor


qh8ma4tcr-e.pdf Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/8A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.59 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details QH8MA4TCR Rohm Semiconductor

Description: MOSFET N/P-CH 30V 9A/8A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9A, 8A, Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V, Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active.

Weitere Produktangebote QH8MA4TCR nach Preis ab 0.63 EUR bis 2.08 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
QH8MA4TCR QH8MA4TCR Hersteller : Rohm Semiconductor qh8ma4tcr-e.pdf Description: MOSFET N/P-CH 30V 9A/8A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 3209 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.43 EUR
16+ 1.17 EUR
100+ 0.91 EUR
500+ 0.77 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 13
QH8MA4TCR QH8MA4TCR Hersteller : ROHM Semiconductor qh8ma4tcr-e.pdf MOSFET Zener Diode, 100mW, 2 Pin.
auf Bestellung 2326 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
25+2.08 EUR
31+ 1.71 EUR
100+ 1.33 EUR
500+ 1.13 EUR
1000+ 0.92 EUR
3000+ 0.87 EUR
6000+ 0.82 EUR
Mindestbestellmenge: 25
QH8MA4TCR Hersteller : ROHM SEMICONDUCTOR qh8ma4tcr-e.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/8A; Idm: 18A; 2.6W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 9/8A
Pulsed drain current: 18A
Power dissipation: 2.6W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 23.7/40.3mΩ
Mounting: SMD
Gate charge: 15.5/19.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
QH8MA4TCR Hersteller : ROHM SEMICONDUCTOR qh8ma4tcr-e.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/8A; Idm: 18A; 2.6W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 9/8A
Pulsed drain current: 18A
Power dissipation: 2.6W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 23.7/40.3mΩ
Mounting: SMD
Gate charge: 15.5/19.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar