QS5K2TR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 2A TSMT5
Supplier Device Package: TSMT5
Vgs(th) (Max) @ Id: 1.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Source
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
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Technische Details QS5K2TR Rohm Semiconductor
Description: MOSFET 2N-CH 30V 2A TSMT5, Supplier Device Package: TSMT5, Vgs(th) (Max) @ Id: 1.5V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V, Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 2A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.25W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Source, Mounting Type: Surface Mount, Package / Case: SOT-23-5 Thin, TSOT-23-5, Packaging: Tape & Reel (TR).
Weitere Produktangebote QS5K2TR nach Preis ab 0.36 EUR bis 1.84 EUR
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QS5K2TR | ROHM Semiconductor |
MOSFETs N-CHAN MOSF 30V 2A TSMT5 |
auf Bestellung 29227 Stücke: Lieferzeit 10-14 Tag (e) |
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QS5K2TR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 2A TSMT5 Supplier Device Package: TSMT5 Vgs(th) (Max) @ Id: 1.5V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V Current - Continuous Drain (Id) @ 25°C: 2A Drain to Source Voltage (Vdss): 30V Power - Max: 1.25W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Source Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Packaging: Cut Tape (CT) |
auf Bestellung 133797 Stücke: Lieferzeit 10-14 Tag (e) |
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| QS5K2TR | ROH |
07+; |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| QS5K2TR |
|
Hersteller: ROHM Semiconductor
MOSFETs N-CHAN MOSF 30V 2A TSMT5
MOSFETs N-CHAN MOSF 30V 2A TSMT5
auf Bestellung 29227 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.71 EUR |
| 10+ | 0.98 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.48 EUR |
| 3000+ | 0.36 EUR |
| QS5K2TR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 2A TSMT5
Supplier Device Package: TSMT5
Vgs(th) (Max) @ Id: 1.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Source
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 2A TSMT5
Supplier Device Package: TSMT5
Vgs(th) (Max) @ Id: 1.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Source
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Cut Tape (CT)
auf Bestellung 133797 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.84 EUR |
| 19+ | 1.14 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.5 EUR |
| QS5K2TR |
|
Hersteller: ROH
07+;
07+;
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)