QS5U13TR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 30V 2A TSMT5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V
auf Bestellung 2999 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 1.46 EUR |
| 21+ | 1.26 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.62 EUR |
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Technische Details QS5U13TR Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT5, Packaging: Tape & Reel (TR), Package / Case: SOT-23-5 Thin, TSOT-23-5, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TSMT5, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V.
Weitere Produktangebote QS5U13TR nach Preis ab 0.77 EUR bis 1.51 EUR
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QS5U13TR | Hersteller : ROHM Semiconductor |
MOSFET N-CH 30V 2A TSMT5 |
auf Bestellung 2386 Stücke: Lieferzeit 14-28 Tag (e) |
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QS5U13TR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 0.9W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
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QS5U13TR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 2A TSMT5 Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V |
Produkt ist nicht verfügbar |
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QS5U13TR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 0.9W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |