| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.76 EUR |
| 10+ | 1.33 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.5 EUR |
| 3000+ | 0.43 EUR |
| 6000+ | 0.39 EUR |
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Technische Details QS5U16TR ROHM Semiconductor
Description: MOSFET N-CH 30V 2A TSMT5, Supplier Device Package: TSMT5, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Power Dissipation (Max): 900mW (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-5 Thin, TSOT-23-5, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V.
Weitere Produktangebote QS5U16TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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QS5U16TR | Rohm Semiconductor |
 Description: MOSFET N-CH 30V 2A TSMT5Supplier Device Package: TSMT5 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 900mW (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
QS5U16TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 500mA; Idm: 2A Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 30V Gate-source voltage: ±12V Drain current: 0.5A Gate charge: 2.8nC On-state resistance: 154mΩ Power dissipation: 1.25W Pulsed drain current: 2A Case: TSOT25 Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET + Schottky |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| QS5U16TR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT5
Supplier Device Package: TSMT5
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 900mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Description: MOSFET N-CH 30V 2A TSMT5
Supplier Device Package: TSMT5
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 900mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| QS5U16TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 500mA; Idm: 2A
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Gate-source voltage: ±12V
Drain current: 0.5A
Gate charge: 2.8nC
On-state resistance: 154mΩ
Power dissipation: 1.25W
Pulsed drain current: 2A
Case: TSOT25
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET + Schottky
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 500mA; Idm: 2A
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Gate-source voltage: ±12V
Drain current: 0.5A
Gate charge: 2.8nC
On-state resistance: 154mΩ
Power dissipation: 1.25W
Pulsed drain current: 2A
Case: TSOT25
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET + Schottky
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH