QS5U16TR ROHM Semiconductor

Description: MOSFET N-CH 30V 2A TSMT5, Supplier Device Package: TSMT5, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Power Dissipation (Max): 900mW (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-5 Thin, TSOT-23-5, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V.