QS5U27TR Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 404+ | 0.43 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.39 EUR |
| 2500+ | 0.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details QS5U27TR Rohm Semiconductor
Description: MOSFET P-CH 20V 1.5A TSMT5, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: TSMT5, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 1.25W (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-5 Thin, TSOT-23-5, Packaging: Tape & Reel (TR).
Weitere Produktangebote QS5U27TR nach Preis ab 0.46 EUR bis 2.01 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
QS5U27TR | Rohm Semiconductor |
 Description: MOSFET P-CH 20V 1.5A TSMT5Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.5A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSMT5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 10 V |
auf Bestellung 238 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
QS5U27TR | ROHM Semiconductor |
MOSFETs P-CH 20V 1.5A |
auf Bestellung 2150 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| QS5U27TR |
|
auf Bestellung 1800 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| QS5U27TR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 1.5A TSMT5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 10 V
Description: MOSFET P-CH 20V 1.5A TSMT5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 10 V
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.44 EUR |
| 17+ | 1.27 EUR |
| 100+ | 0.98 EUR |
| QS5U27TR |
|
Hersteller: ROHM Semiconductor
MOSFETs P-CH 20V 1.5A
MOSFETs P-CH 20V 1.5A
auf Bestellung 2150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.01 EUR |
| 10+ | 1.26 EUR |
| 100+ | 0.84 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.6 EUR |
| 3000+ | 0.5 EUR |
| 6000+ | 0.46 EUR |