QS5Y2FSTR

QS5Y2FSTR Rohm Semiconductor


datasheet?p=QS5Y2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: PNP+NPN DRIVER TRANSISTOR. DEVI
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz, 300MHz
Supplier Device Package: TSMT5
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.34 EUR
6000+0.33 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details QS5Y2FSTR Rohm Semiconductor

Description: PNP+NPN DRIVER TRANSISTOR. DEVI, Packaging: Tape & Reel (TR), Package / Case: SOT-23-5 Thin, TSOT-23-5, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP (Emitter Coupled), Operating Temperature: 150°C (TJ), Power - Max: 500mW, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V, Frequency - Transition: 320MHz, 300MHz, Supplier Device Package: TSMT5.

Weitere Produktangebote QS5Y2FSTR nach Preis ab 0.30 EUR bis 1.18 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
QS5Y2FSTR QS5Y2FSTR Hersteller : Rohm Semiconductor datasheet?p=QS5Y2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP+NPN DRIVER TRANSISTOR. DEVI
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Frequency - Transition: 320MHz, 300MHz
Supplier Device Package: TSMT5
auf Bestellung 9159 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.02 EUR
21+0.87 EUR
100+0.61 EUR
500+0.47 EUR
1000+0.38 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
QS5Y2FSTR QS5Y2FSTR Hersteller : ROHM Semiconductor datasheet?p=QS5Y2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Bipolar Transistors - BJT PNP+NPN Driver Tran TSMT5
auf Bestellung 3845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.18 EUR
10+0.91 EUR
100+0.61 EUR
500+0.47 EUR
1000+0.41 EUR
3000+0.33 EUR
9000+0.30 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH