QS6J1TR Rohm Semiconductor
| Anzahl | Preis |
|---|---|
| 437+ | 0.33 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.29 EUR |
| 2500+ | 0.27 EUR |
| 5000+ | 0.25 EUR |
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Technische Details QS6J1TR Rohm Semiconductor
Description: MOSFET 2P-CH 20V 1.5A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.5A, Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V, Rds On (Max) @ Id, Vgs: 215mOhm @ 1.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TSMT6 (SC-95).
Weitere Produktangebote QS6J1TR nach Preis ab 0.32 EUR bis 1.51 EUR
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QS6J1TR | Hersteller : Rohm Semiconductor |
 Description: MOSFET 2P-CH 20V 1.5A TSMT6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V Rds On (Max) @ Id, Vgs: 215mOhm @ 1.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSMT6 (SC-95) |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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QS6J1TR | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH Si 20V 1.5A 6-Pin TSMT T/R |
auf Bestellung 278 Stücke: Lieferzeit 14-21 Tag (e) |
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QS6J1TR | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH Si 20V 1.5A 6-Pin TSMT T/R |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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QS6J1TR | Hersteller : Rohm Semiconductor |
Description: MOSFET 2P-CH 20V 1.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V Rds On (Max) @ Id, Vgs: 215mOhm @ 1.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSMT6 (SC-95) |
auf Bestellung 11562 Stücke: Lieferzeit 10-14 Tag (e) |
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QS6J1TR | Hersteller : ROHM Semiconductor |
MOSFETs 2P-CH 20V 1.5A TSMT6 |
auf Bestellung 5938 Stücke: Lieferzeit 10-14 Tag (e) |
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| QS6J1TR | Hersteller : ROHM |
0551+ SOT-163 |
auf Bestellung 2850 Stücke: Lieferzeit 21-28 Tag (e) |