QS6J1TR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET 2P-CH 20V 1.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
Rds On (Max) @ Id, Vgs: 215mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.37 EUR |
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Technische Details QS6J1TR Rohm Semiconductor
Description: MOSFET 2P-CH 20V 1.5A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.5A, Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V, Rds On (Max) @ Id, Vgs: 215mOhm @ 1.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TSMT6 (SC-95).
Weitere Produktangebote QS6J1TR nach Preis ab 0.36 EUR bis 1 EUR
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QS6J1TR | Hersteller : Rohm Semiconductor |
Description: MOSFET 2P-CH 20V 1.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V Rds On (Max) @ Id, Vgs: 215mOhm @ 1.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSMT6 (SC-95) |
auf Bestellung 8830 Stücke: Lieferzeit 10-14 Tag (e) |
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QS6J1TR | Hersteller : ROHM Semiconductor |
MOSFET 2P-CH 20V 1.5A TSMT6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| QS6J1TR | Hersteller : ROHM |
0551+ SOT-163 |
auf Bestellung 2850 Stücke: Lieferzeit 21-28 Tag (e) |
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| QS6J1TR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 430mΩ Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| QS6J1TR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 430mΩ Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |