
QS6K1FRATR Rohm Semiconductor

Description: MOSFET 2N-CH 30V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details QS6K1FRATR Rohm Semiconductor
Description: MOSFET 2N-CH 30V 1A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 900mW (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V, Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V, FET Feature: Logic Level Gate, 2.5V Drive, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote QS6K1FRATR nach Preis ab 0.28 EUR bis 1.57 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
QS6K1FRATR | Hersteller : Rohm Semiconductor |
![]() |
auf Bestellung 2280 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
QS6K1FRATR | Hersteller : ROHM Semiconductor |
![]() |
auf Bestellung 2670 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
QS6K1FRATR | Hersteller : Rohm Semiconductor |
![]() |
auf Bestellung 1980 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
QS6K1FRATR | Hersteller : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 12194 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
QS6K1FRATR | Hersteller : ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |