QS6U24TR Rohm Semiconductor
auf Bestellung 2154 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 444+ | 0.33 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.29 EUR |
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Technische Details QS6U24TR Rohm Semiconductor
Description: MOSFET P-CH 30V 1A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 10 V.
Weitere Produktangebote QS6U24TR nach Preis ab 0.34 EUR bis 0.97 EUR
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QS6U24TR | Hersteller : Rohm Semiconductor |
 Description: MOSFET P-CH 30V 1A TSMT6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 10 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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QS6U24TR | Hersteller : ROHM Semiconductor |
MOSFETs P-CH 30V 1A TSMT6 |
auf Bestellung 4516 Stücke: Lieferzeit 10-14 Tag (e) |
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QS6U24TR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 1A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 10 V |
auf Bestellung 11255 Stücke: Lieferzeit 10-14 Tag (e) |
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| QS6U24TR | Hersteller : ROHM SEMICONDUCTOR |
QS6U24TR SMD P channel transistors |
Produkt ist nicht verfügbar |