QS8J11TCR Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 252+ | 0.69 EUR |
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Technische Details QS8J11TCR Rohm Semiconductor
Description: MOSFET 2P-CH 12V 3.5A TSMT8, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR), Part Status: Not For New Designs, Supplier Device Package: TSMT8, Vgs(th) (Max) @ Id: 1V @ 1mA, FET Feature: Logic Level Gate, 1.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 3.5A, Drain to Source Voltage (Vdss): 12V, Power - Max: 550mW.
Weitere Produktangebote QS8J11TCR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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QS8J11TCR | Rohm Semiconductor |
 Description: MOSFET 2P-CH 12V 3.5A TSMT8Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Tape & Reel (TR) Part Status: Not For New Designs Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 1V @ 1mA FET Feature: Logic Level Gate, 1.5V Drive Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V Current - Continuous Drain (Id) @ 25°C: 3.5A Drain to Source Voltage (Vdss): 12V Power - Max: 550mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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QS8J11TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 12V 3.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 550mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT8 Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
QS8J11TCR | ROHM Semiconductor |
MOSFET Dual P-Channel MOSFET Transistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| QS8J11TCR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 3.5A TSMT8
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Drain to Source Voltage (Vdss): 12V
Power - Max: 550mW
Description: MOSFET 2P-CH 12V 3.5A TSMT8
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Drain to Source Voltage (Vdss): 12V
Power - Max: 550mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| QS8J11TCR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Description: MOSFET 2P-CH 12V 3.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| QS8J11TCR |
|
Hersteller: ROHM Semiconductor
MOSFET Dual P-Channel MOSFET Transistor
MOSFET Dual P-Channel MOSFET Transistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH