QS8J11TCR Rohm Semiconductor

Description: MOSFET 2P-CH 12V 3.5A TSMT8, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR), Part Status: Not For New Designs, Supplier Device Package: TSMT8, Vgs(th) (Max) @ Id: 1V @ 1mA, FET Feature: Logic Level Gate, 1.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 3.5A, Drain to Source Voltage (Vdss): 12V, Power - Max: 550mW.