QS8J13TR Rohm Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 345+ | 0.46 EUR |
| 391+ | 0.39 EUR |
| 500+ | 0.37 EUR |
| 2000+ | 0.36 EUR |
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Technische Details QS8J13TR Rohm Semiconductor
Description: ROHM - QS8J13TR - Dual-MOSFET, p-Kanal, 12 V, 12 V, 5.5 A, 5.5 A, 0.015 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 5.5A, hazardous: false, rohsPhthalatesCompliant: YES, Drain-Source-Spannung Vds, p-Kanal: 12V, usEccn: EAR99, Drain-Source-Durchgangswiderstand, p-Kanal: 0.015ohm, Dauer-Drainstrom Id, n-Kanal: 5.5A, Verlustleistung, p-Kanal: 1.5W, Drain-Source-Spannung Vds, n-Kanal: 12V, euEccn: NLR, Anzahl der Pins: 8Pin(s), Drain-Source-Durchgangswiderstand, n-Kanal: 0.015ohm, productTraceability: No, Verlustleistung, n-Kanal: 1.5W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote QS8J13TR nach Preis ab 0.69 EUR bis 2 EUR
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QS8J13TR | Hersteller : Rohm Semiconductor |
 Trans MOSFET P-CH 12V 5.5A 8-Pin TSMT T/R |
auf Bestellung 780 Stücke: Lieferzeit 14-21 Tag (e) |
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QS8J13TR | Hersteller : ROHM Semiconductor |
MOSFET 1.5V Drive Pch+Pch MOSFET |
auf Bestellung 2989 Stücke: Lieferzeit 14-28 Tag (e) |
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QS8J13TR | Hersteller : Rohm Semiconductor |
Description: MOSFET 2P-CH 12V 5.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.5A Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 6V Rds On (Max) @ Id, Vgs: 22mOhm @ 5.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 2718 Stücke: Lieferzeit 21-28 Tag (e) |
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QS8J13TR | Hersteller : ROHM |
Description: ROHM - QS8J13TR - Dual-MOSFET, p-Kanal, 12 V, 12 V, 5.5 A, 5.5 A, 0.015 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5.5A hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 12V usEccn: EAR99 Drain-Source-Durchgangswiderstand, p-Kanal: 0.015ohm Dauer-Drainstrom Id, n-Kanal: 5.5A Verlustleistung, p-Kanal: 1.5W Drain-Source-Spannung Vds, n-Kanal: 12V euEccn: NLR Anzahl der Pins: 8Pin(s) Drain-Source-Durchgangswiderstand, n-Kanal: 0.015ohm productTraceability: No Verlustleistung, n-Kanal: 1.5W Betriebstemperatur, max.: 150°C |
auf Bestellung 536 Stücke: Lieferzeit 14-21 Tag (e) |
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| QS8J13TR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -5.5A; Idm: -18A; 1.5W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.5A Pulsed drain current: -18A Power dissipation: 1.5W Case: TSMT8 On-state resistance: 58mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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QS8J13TR | Hersteller : Rohm Semiconductor |
Description: MOSFET 2P-CH 12V 5.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.5A Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 6V Rds On (Max) @ Id, Vgs: 22mOhm @ 5.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
Produkt ist nicht verfügbar |
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| QS8J13TR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -5.5A; Idm: -18A; 1.5W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.5A Pulsed drain current: -18A Power dissipation: 1.5W Case: TSMT8 On-state resistance: 58mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |