QS8J2TR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET 2P-CH 12V 4A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 6V
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.62 EUR |
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Technische Details QS8J2TR Rohm Semiconductor
Description: MOSFET 2P-CH 12V 4A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 550mW, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 6V, Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, FET Feature: Logic Level Gate, 1.5V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active.
Weitere Produktangebote QS8J2TR nach Preis ab 0.55 EUR bis 1.51 EUR
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QS8J2TR | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH Si 12V 4A 8-Pin TSMT T/R |
auf Bestellung 375 Stücke: Lieferzeit 14-21 Tag (e) |
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QS8J2TR | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH Si 12V 4A 8-Pin TSMT T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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QS8J2TR | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH Si 12V 4A 8-Pin TSMT T/R |
auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) |
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QS8J2TR | Hersteller : Rohm Semiconductor |
Description: MOSFET 2P-CH 12V 4A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 550mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 6V Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 7444 Stücke: Lieferzeit 10-14 Tag (e) |
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QS8J2TR | Hersteller : ROHM Semiconductor |
MOSFET TRANS MOSFET PCH 12V 4A 8PIN |
auf Bestellung 2036 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| QS8J2TR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -4A; Idm: -12A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -4A Pulsed drain current: -12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±10V On-state resistance: 132mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| QS8J2TR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -4A; Idm: -12A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -4A Pulsed drain current: -12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±10V On-state resistance: 132mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |