auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 106+ | 1.48 EUR |
| 111+ | 1.36 EUR |
| 250+ | 1.26 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.08 EUR |
| 2500+ | 1.01 EUR |
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Technische Details QS8J5TR Rohm Semiconductor
Description: MOSFET 2P-CH 30V 5A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 600mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5A, Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V, Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Not For New Designs.
Weitere Produktangebote QS8J5TR nach Preis ab 1.02 EUR bis 2.52 EUR
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QS8J5TR | Hersteller : Rohm Semiconductor |
 Description: MOSFET 2P-CH 30V 5A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Not For New Designs |
auf Bestellung 2567 Stücke: Lieferzeit 10-14 Tag (e) |
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QS8J5TR | Hersteller : ROHM Semiconductor |
MOSFET TRANS MOSFET PCH 30V 5A 8PIN |
auf Bestellung 2874 Stücke: Lieferzeit 10-14 Tag (e) |
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| QS8J5TR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Pulsed drain current: -20A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 63mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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QS8J5TR | Hersteller : Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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| QS8J5TR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Pulsed drain current: -20A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 63mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |