auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 110+ | 1.35 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.91 EUR |
Produktrezensionen
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Technische Details QS8J5TR Rohm Semiconductor
Description: MOSFET 2P-CH 30V 5A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 600mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5A, Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V, Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Not For New Designs.
Weitere Produktangebote QS8J5TR nach Preis ab 1.00 EUR bis 3.31 EUR
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QS8J5TR | Hersteller : ROHM Semiconductor |
 MOSFETs TRANS MOSFET PCH 30V 5A 8PIN |
auf Bestellung 1981 Stücke: Lieferzeit 10-14 Tag (e) |
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QS8J5TR | Hersteller : Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Not For New Designs |
auf Bestellung 1123 Stücke: Lieferzeit 10-14 Tag (e) |
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| QS8J5TR | Hersteller : ROHM SEMICONDUCTOR |
QS8J5TR Multi channel transistors |
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QS8J5TR | Hersteller : Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Not For New Designs |
Produkt ist nicht verfügbar |